Dr Guy Le Lay, Professor Emeritus at Aix-Marseille University (France), is the 2021 laureate of the Fernand Holweck Medal and Prize jointly awarded by the Institute of Physics in the United Kingdom and the French Physical Society (IOP/SFP) for pioneering the realization and study of the emerging properties of new two-dimensional allotropes of silicon, germanium, tin and lead, and coined artificial Xenes. He is an expert in NanoScience and Synchrotron Radiation, serving for eight years as a member of the European Round Table on Synchrotron Radiation and Free Electron Lasers. He has also collaborated with the ESA and the NASA as co-PI of the Mercuric Iodide Crystal Growth experiment inside the First International Microgravity Laboratory (IML-1) onboard the Discovery shuttle, in January 1992. During his career, he has chaired and organized a large number of international Schools, Workshops and Conferences and served in many UNESCO, NATO, EC, international, national and regional panels and expert committees.

Prof Han- Ki Kim received his Ph.D. in Materials Science and Engineering from Gwangju Institute of Science and Technology in 2003. From 2003 to 2005, he worked at Samsung SDI as a principle researcher and developed TCO materials for AMOLEDs. He was an assistant professor at Kumoh National Institute of Technology from 2005 to 2008. He was professor and Kyung Hee fellow in department of Advanced Materials Science and Engineering for Information and Electronics at Kyung Hee University from 2009 to 2017. Since 2018, he has been a full professor in school of advanced materials science and engineering at Sungkyunkwan University. His research include transparent electrode materials, flexible and transparent electronics and printable electronics. He has published over 310 SCI papers and holds 100 patents. RESEARCH EXPERIENCE : Sungkyunkwan University (Mar. 2018-present) School of Advanced Materials Science and Engineering Kyung Hee University (Feb. 2009- 2017) Department of Advanced Materials Science and Engineering: Professor and Kyung Hee Fellow Korea Research Institute of Chemical Technology (Mar. 2015-Feb. 2016) Adjunction researcher (Chemical Materials Solutions Center) Kumoh National Institute of Technology (Sept. 2005- Jan. 2009) Department of Information and Nano Materials Engineering Assistant Professor Samsung SDI (Aug. 2003- Aug. 2005) Core Technology Lab (Principle Researcher) University of Illinois at Urbana-Champaign (UIUC) (Jun. 2002- April. 2003) Micro and Nanotechnology Lab (Adesida group) Visiting Scholar

Lucian N. Cojocariu joined the Romanian LHCb Group at the Horia Hulubei National Institute for R&D in Physics and Nuclear Engineering (IFIN-HH)in December 2013. Since then, he is an associate member of the Large Hadron Collider beauty (LHCb) experiment at the European Organization for Nuclear Research (CERN). Previously, from 2008 until 2013, he was a research assistant at the Faculty of Electrical Engineering and Computer Science (FIESC) from Stefan cel Mare University of Suceava (USV). With two B.A. degrees, first one in Applied Electronics and the second in Engineering and Management, he obtained in 2012 a M.S. degree in Computers and Communication Networks from FIESC. In 2017, he received a Ph.D. degree in Electronics and Telecommunication from USV. Lucian research and development activities are focused on radiation hardness qualification of CMOS integrated circuits with application for Large Hadron Collider (LHC) experiments.Over the last years, he was involved in testing of state-of-the-art ASICs and commercial off-the-shelf FPGAs for LHC mixt-field radiation environment. Also, he is actively involved in the LHCb Upgrade Program Phase Ia by contributing to the front-end readout electronics, now in the phase of installation and commissioning for the new photo-detection system of two Ring Imaging Cherenkov (RICH) sub-detectors.

In 1973 she graduated from Faculty of Physics of the Lomonosov Moscow State University (MSU). In 1976 joined the Semiconductor Physics Department at the Lebedev Physical Institute of Russian Academy of Sciences (FIAN) as a post-graduated student. In this three-year period her research interest was focused on anisotropy of the electrical and optical characteristics of layered semiconductor GeS. In 1986 she received a PhD degree in Physics of Semiconductors from FIAN. In 1991 joined the Solid State Physics Department of FIAN as a researcher. Currently, her main research is focused on the resonant tunneling of electrons in semiconductor nanostructures (superlattices and double-barrier diodes).

Magali Morales obtained her PhD in Physics from the University of Grenoble in 1999. Since 2002, she is an associated professor of the University of Caen Normandie. She joined the CIMAP laboratory where her main research activity focused on structural and microstructural characterizations of III nitrides heterostructuresin order to optimizehigh electron mobility transistors performances by using mainly high resolution X-ray diffraction and transmission electron microscopy

Luca Persichetti obtained his PhD in Physics from the University of Roma Tor Vergata in 2012. In 2013, he joined ETH-Zurich as a Marie Curie COFUND Fellow to explore the nanoscale magnetic properties of single atoms on surfaces as qubits. Starting from April 2018, LP is a Researcher at the Department of Sciences of Roma Tre University, where his main research activity is focused on the growth and the structural/spectroscopic characterization of Group IV heterostructures for developing THz emitters, in particular Quantum Cascade Lasers.

Chunfu Zhang, Professor in Xidian University, China. He received the B.S., and M.S. degrees from Xidian University, Xian, China, in 2002,and 2005, respectively. And he received the Ph.D. degree from the National University of Singapore in 2010. Now he is currently with the School of Microelectronics, Xidian University, Xian, China. His research interests include the wide bandgap semiconductor devices, perovskite solar cells, photodetectors and other novel semiconductor devices. He has published more than 190 research papers and obtained more than 40 Chinese patents.

Prof Han- Ki Kim received his Ph.D. in Materials Science and Engineering from Gwangju Institute of Science and Technology in 2003. From 2003 to 2005, he worked at Samsung SDI as a principle researcher and developed TCO materials for AMOLEDs. He was an assistant professor at Kumoh National Institute of Technology from 2005 to 2008. He was professor and Kyung Hee fellow in department of Advanced Materials Science and Engineering for Information and Electronics at Kyung Hee University from 2009 to 2017. Since 2018, he has been a full professor in school of advanced materials science and engineering at Sungkyunkwan University. His research include transparent electrode materials, flexible and transparent electronics and printable electronics. He has published over 310 SCI papers and holds 100 patents. RESEARCH EXPERIENCE : Sungkyunkwan University (Mar. 2018-present) School of Advanced Materials Science and Engineering Kyung Hee University (Feb. 2009- 2017) Department of Advanced Materials Science and Engineering: Professor and Kyung Hee Fellow Korea Research Institute of Chemical Technology (Mar. 2015-Feb. 2016) Adjunction researcher (Chemical Materials Solutions Center) Kumoh National Institute of Technology (Sept. 2005- Jan. 2009) Department of Information and Nano Materials Engineering Assistant Professor Samsung SDI (Aug. 2003- Aug. 2005) Core Technology Lab (Principle Researcher) University of Illinois at Urbana-Champaign (UIUC) (Jun. 2002- April. 2003) Micro and Nanotechnology Lab (Adesida group) Visiting Scholar

Paula Ghedini Der Agopian received the M.S. and Ph.D. degrees in microelectronics from the University of Sao Paulo (USP), Sao Paulo, Brazil, in 2003 and 2008. She was a Post-Doctoral Researcher with USP/Imec (Brazil/Belgium). Since 2016, she has been a Professor with Sao Paulo State University (UNESP), Brazil. Her research is focused on semiconductor devices as SOI CMOS Technology, FinFET, strained devices, tunneling transistors (TFETs), Nanosheets and Nanowire structures.

Volodymyr Gnatyuk is a Senior Scientist at V.E. Lashkaryov Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine (ISP-NASU). He received his M.Sc. degree (speciality: Physics, specialization: Theoretical Physics) from V.N. Karazin Kharkiv National University in 1985, Ph.D. degree in Physics & Mathematics (speciality: Physics of Semiconductors & Dielectrics) from ISP-NASU in 1993, Assoc. Prof. title from V.G. Korolenko Poltava State Pedagogical Institute in 1995 (all in Ukraine), and title of Honorable Guest Prof. of Shizuoka University (Japan) in 2009-2020. He is an expert in semiconductor physics & technology, solid-state physics & optics, photo- & optotoelectronics including IR & nuclear radiation sensors, volumetric laser marking & recording. His main achievements are modification of photoelectric characteristics of II-VI & III-V semiconductors by laser irradiation and development of X/γ-ray detectors based of CdTe Schottky or p-n junction diodes formed by ion bombardment or laser doping, respectively. He was a leader/implementer of 51 international R&D projects. He is a (co)author of 470 publications (177 articles, 285 conf. abstracts, 5 patents& 3 textbooks).

Alexei Nazarov received the Ph.D and Dr.Sci degrees in physics and mathematics in 1982 and 1993, respectively, from the Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kyiv, Ukraine. From 1986 to 1993, he was a senior researcher, from 1993 to 2005 was a leading researcher and from 2005 up to present time is head of department of Functional materials and Nanostructures in Lashkaryov Institute of Semiconductor Physics (ISP), National Academy of Sciences of Ukraine, Kyiv, Ukraine. In 2010 he joined the National Technical University of Ukraine (KPI), as a Professor of General Physics and Solid State Physics Department. His research interests include physics of nanodevices and technology of electronic nanostructured materials, produced on the base of Si, C, SiC and ZnO; light-emitting nanocomposite carbon-based materials; graphene technology and electronic properties. He is the author or coauthor more than 290 technical journal papers and 300 communications at international conferences, the author or the editor of seven books and obtained 12 Ukrainian and European patents. He was organizer of eight international conferences in SOI field and field of Functional materials and devices.